INTEGRATION OF MONOLAYER GRAPHENE WITH A SEMICONDUCTOR DEVICE

INTEGRATION OF MONOLAYER GRAPHENE WITH A SEMICONDUCTOR DEVICE

The integration of monolayer graphene with a semiconductor device for gas sensing applications involves obtaining a CMOS device that is prepared to receive monolayer graphene channels. After population of the monolayer graphene channels on the CMOS device, electrical contacts are formed at each end...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zanjani Seyedeh Maryam Mortazavi, Holt Milo, Akinwande Deji, Sadeghi Mir Mohammad
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
PULSE TECHNIQUE
TESTING
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Zusammenfassung:The integration of monolayer graphene with a semiconductor device for gas sensing applications involves obtaining a CMOS device that is prepared to receive monolayer graphene channels. After population of the monolayer graphene channels on the CMOS device, electrical contacts are formed at each end of the monolayer graphene channels with interconnect vias having sidewalls angled at less then 90°. Additional metallization pads are added at the location of the monolayer graphene channels to improve planarity and reliability of the semiconductor processing involved.