SPUTTERING APPARATUS AND SPUTTERING METHOD USING THE SAME

A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjac...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI Seungho, LEE Kanghee, YOO Haeyoung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS
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Beschreibung
Zusammenfassung:	A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.