COPPER ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method fo...

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Bibliographische Detailangaben
Hauptverfasser:	Otsuki Tomio, Morii Yasushi
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.