SYSTEMS AND METHODS FOR AUTOMATIC CORRECTION OF DRIFT BETWEEN INSPECTION AND DESIGN FOR MASSIVE PATTERN SEARCHING

Systems and methods for automatic correction of drift between inspection and design for massive pattern searching are disclosed herein. Defects are identified in a scan of a wafer. The defects are associated with tool coordinates. An SEM review tool captures centered images of the defects. The SEM r...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tseng Chi-Yuan, Hsueh Ming-Hsiang
Format: Patent
Sprache:eng
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Zusammenfassung:Systems and methods for automatic correction of drift between inspection and design for massive pattern searching are disclosed herein. Defects are identified in a scan of a wafer. The defects are associated with tool coordinates. An SEM review tool captures centered images of the defects. The SEM review tool is aligned with the wafer using design polygons in an imported design file. Design coordinates are exported and used to define patterns of interest and identifying locations of those patterns of interest.