SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD

Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber and on which the substrate is held; a shower head provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.