METHOD TO DEPOSIT CONFORMAL AND LOW WET ETCH RATE ENCAPSULATION LAYER USING PECVD

METHOD TO DEPOSIT CONFORMAL AND LOW WET ETCH RATE ENCAPSULATION LAYER USING PECVD

Methods of depositing conformal, dense silicon-containing films having low hydrogen content are provided herein. Methods involve pulsing a plasma while exposing a substrate to a silicon-containing precursor and reactant to facilitate a primarily radical-based pulsed plasma enhanced chemical vapor de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Mao Yisha, Singhal Akhil, van Schravendijk Bart J, Wei Joseph Hung-chi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Methods of depositing conformal, dense silicon-containing films having low hydrogen content are provided herein. Methods involve pulsing a plasma while exposing a substrate to a silicon-containing precursor and reactant to facilitate a primarily radical-based pulsed plasma enhanced chemical vapor deposition process for depositing a conformal silicon-containing film. Methods also involve periodically performing a post-treatment operation whereby, for every about 20 Å to about 50 Å of film deposited using pulsed plasma PECVD, the deposited film is exposed to an inert plasma to densify and reduce hydrogen content in the deposited film.