IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF

IMAGE SENSING DEVICE AND MANUFACTURING METHOD THEREOF

Some embodiments of the present disclosure provide a back side illuminated. (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LU CHI-MING, TSAO JUNGIH, HUANG CHIHANG, CHEN JIAN-MING, LIANG YAO-HSIANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Some embodiments of the present disclosure provide a back side illuminated. (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.