PIEZOELECTRIC CERAMIC SPUTTERING TARGET, LEAD-FREE PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM ELEMENT USING THE SAME

PIEZOELECTRIC CERAMIC SPUTTERING TARGET, LEAD-FREE PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM ELEMENT USING THE SAME

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains a...

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Bibliographische Detailangaben
Hauptverfasser: NANAO Masaru, ISHII Kenta, AZUMA Tomohisa
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 μm and not larger than 30 μm.