POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME

A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to...

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Bibliographische Detailangaben
Hauptverfasser: GO Si Hyeon, CHOI Jae Sik, SUNG Moon Taek, HEO Jun Young, OH Dong Seong
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.