METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE

In a method of manufacturing a semiconductor device, a first insulating interlayer and a sacrificial layer is sequentially formed on a substrate. The sacrificial layer is partially removed to form a first opening exposing an upper surface of the first insulating interlayer. An insulating liner inclu...

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Bibliographische Detailangaben
1. Verfasser:	SIEW Yong-Kong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In a method of manufacturing a semiconductor device, a first insulating interlayer and a sacrificial layer is sequentially formed on a substrate. The sacrificial layer is partially removed to form a first opening exposing an upper surface of the first insulating interlayer. An insulating liner including silicon oxide is conformally formed on the exposed upper surface of the first insulating interlayer and a sidewall of the first opening. At least a portion of the insulating liner on the upper surface of the first insulating interlayer and a portion of the first insulating interlayer thereunder are removed to form a second opening connected to the first opening. A self-forming barrier (SFB) pattern is formed on a sidewall of the second opening and the insulating liner. A wiring structure is formed to fill the first and second openings. After the sacrificial layer is removed, a second insulating interlayer is formed.