WAFER PLACEMENT APPARATUS

A wafer placement apparatus 30 includes a ceramic substrate 32 having a wafer placement surface, a heater electrode 34 embedded in the ceramic substrate 32, and feeder rods 36 and 37 made of Cu and electrically connected to the heater electrode 34 through a surface of the ceramic substrate 32 opposite the wafer placement surface. When one end and the other end of the feeder rod 36 in an unengaged state are a fixed end and a free end, respectively, and when a relationship between a stress applied to the feeder rod 36 at a position 50 mm apart from the fixed end toward the free end and a strain at the position is obtained, the stress is in a range of 5 to 10 N when the strain is 1 mm.