DETERMINING A STATE OF MEMRISTORS IN A CROSSBAR ARRAY

DETERMINING A STATE OF MEMRISTORS IN A CROSSBAR ARRAY

In one example in accordance with the present disclosure a method of determining a state of a memristor in a crossbar array is described. In the method a bias voltage is applied to a target row line in the crossbar array, which bias voltage causes a bias current to pass through a target memristor al...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Jeon Yoocharn
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In one example in accordance with the present disclosure a method of determining a state of a memristor in a crossbar array is described. In the method a bias voltage is applied to a target row line in the crossbar array, which bias voltage causes a bias current to pass through a target memristor along the target row line. The bias voltage is increased by a predetermined amount to a state voltage. A state current flowing through the target memristor is determined. The state current is based on the state voltage. A state of the target memristor is determined based on the state current.