MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KISHI Tatsuya, HOSOTANI Keiji
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.