FORMATION OF WORK-FUNCTION LAYERS FOR GATE ELECTRODE USING A GAS CLUSTER ION BEAM

FORMATION OF WORK-FUNCTION LAYERS FOR GATE ELECTRODE USING A GAS CLUSTER ION BEAM

An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZANG Hui, HUANG Jidong, WANG Yanzhen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.