METHOD OF LASER PROCESSING FOR SUBSTRATE CLEAVING OR DICING THROUGH FORMING "SPIKE-LIKE" SHAPED DAMAGE STRUCTURES

This invention provides an effective and a method of laser processing for separating semiconductor devices formed on a single substrate (6) or separating high thickness, hard and solid substrates (6), which is rapid. During preparation of the device or substrate (6) for the cleaving/breaking/dicing procedure an area of damage (8, 11) is achieved by obtaining deep and narrow damage area along the intended line of cleaving. The laser processing method comprises a step of modifying a pulsed laser beam (1) by an focusing unit (1), such as that an "spike"-shaped beam convergence zone, more particularly an above workpiece material optical damage threshold fluence (power distribution) in the bulk of the workpiece (6) is produced. During the aforementioned step a modified area (having a "spike"-type shape) is created. The laser processing method further comprises a step of creating a number of such damage structures (8, 11) in a predetermined breaking line by relative translation of the workpiece (6) relative the laser beam (1) condensation point.