METHOD, APPARATUS, AND SYSTEM FOR MOL INTERCONNECTS WITHOUT TITANIUM LINER

Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein th...

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Bibliographische Detailangaben
Hauptverfasser: Kamineni Vimal, Raymond Mark V, Adusumilli Praneet, Niu Chengyu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.