Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches

Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process chamber containing the semiconductor substrate. A barometric pressure in the process chamber is at least 50% of standard atmosphere. The trenches...

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Hauptverfasser:	Baumgartl Johannes, Kuenle Matthias
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Baumgartl Johannes Kuenle Matthias
description	Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process chamber containing the semiconductor substrate. A barometric pressure in the process chamber is at least 50% of standard atmosphere. The trenches are filled with epitaxially deposited crystalline silicon.
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title	Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches
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