SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

A semiconductor device may include a first conductive pattern having a line portion and a pad portion connected to the line portion on a substrate, a gate insulating pattern and a second conductive pattern sequentially stacked on the substrate, and a capping layer disposed on the first and second co...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SEONG Hojun, KIM Woo-Jung, SIM Jae-Hwang, PARK Bongtae
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device may include a first conductive pattern having a line portion and a pad portion connected to the line portion on a substrate, a gate insulating pattern and a second conductive pattern sequentially stacked on the substrate, and a capping layer disposed on the first and second conductive patterns. A first trench is defined in an upper portion of the substrate adjacent to one side of the second conductive pattern, and the capping layer at least partially fills the first trench.