MAGNETIC MEMORY DEVICE AND OPERATING METHOD THEREOF

A magnetic memory device may include a bit line, a plurality of source lines, a plurality of normal cells coupled between the bit line and the plurality of source lines, and each including a magnetic resistance element and a switching element coupled in series to the magnetic resistance element and switched by a word line signal, a dummy cell coupled to the bit line, and a spin-hall effect material layer between the bit line and the magnetic resistance element. The magnetic resistance element may write data according to a first current that flows through the dummy cell and flows in a direction parallel to the magnetic resistance element, and a second current that flows through the magnetic resistance element.