COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION

This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAMOTO Rikimaru, ENDO Takafumi, FUJITANI Noriaki
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.