SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of...

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Bibliographische Detailangaben
Hauptverfasser: SU Hung-Wen, LIN Sheng-Hsuan, LEE Ya-Lien, LIU Hsiao-Ping, KAO Yen-Shou, LIN Rueijer, HSU Hung-Chang, TSAI Ming-Hsing
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole.