Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect

A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a...

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Hauptverfasser: GAMAND Patrice, BUIJSMAN Adrianus Alphonsus Jozef, ROOZEBOOM Freddy, KEMMEREN Antonius Lucien Adrianus Maria, HUBERT Gerardus Tarcisius Maria
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.