SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Provided is a semiconductor device including a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kuo Kang-Min, Yeh Chi-Ruei, Chan Wen-Hsin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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