SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Provided is a semiconductor device including a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate s...

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Bibliographische Detailangaben
Hauptverfasser:	Kuo Kang-Min, Yeh Chi-Ruei, Chan Wen-Hsin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a semiconductor device including a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate structure and extends to a first top surface of the dielectric layer. The etch stop layer is over the adhesion layer and in contact with a second top surface of the dielectric layer.