ETCH STOP IN A DEP-ETCH-DEP PROCESS

ETCH STOP IN A DEP-ETCH-DEP PROCESS

Described herein is a method of forming semiconductor devices. The method comprises depositing an etch stop layer of titanium aluminum carbide in a cavity of a semiconductor device; depositing a first layer of metal on the etch stop layer; etching the first layer of metal to create an etch-modified...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BAO RUQIANG, WONG KEITH KWONG HON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Described herein is a method of forming semiconductor devices. The method comprises depositing an etch stop layer of titanium aluminum carbide in a cavity of a semiconductor device; depositing a first layer of metal on the etch stop layer; etching the first layer of metal to create an etch-modified surface of the first layer of metal; and depositing a second layer of metal on the etch- modified surface of the first layer of metal.