TURN-OFF OVERVOLTAGE LIMITING FOR IGBT

A turn-off overvoltage limiting for IGBT is described herein. The injection of a sample of the overvoltage across the IGBT in the gate drive to slow down the slope of the gate voltage decrease only during the overvoltage above a predetermined value is described herein. Techniques to increase the par...

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Bibliographische Detailangaben
Hauptverfasser: El Yacoubi Maalainine, Cyr Jean-Marc, Fleury Pascal, Amar Mohammed
Format: Patent
Sprache:eng
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Zusammenfassung:A turn-off overvoltage limiting for IGBT is described herein. The injection of a sample of the overvoltage across the IGBT in the gate drive to slow down the slope of the gate voltage decrease only during the overvoltage above a predetermined value is described herein. Techniques to increase the parasitic inductance to allow the control to limit an overvoltage at turn off of the second IGBT are also described herein.