TRANSPARENT CONDUCTOR, METHOD FOR PREPARING THE SAME AND DISPLAY APPARATUS INCLUDING THE SAME

A transparent conductor, a method of manufacturing the same, and a display including the same, the transparent conductor including metal nanowires; and a matrix in which the metal nanowires are embedded, wherein a capping layer is formed on surfaces of the metal nanowires, the capping layer includin...

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Bibliographische Detailangaben
Hauptverfasser:	HWANG Oh Hyeon, KIM Young Hoon, KANG Kyoung Ku, JUNG Yong Un, SHIM Dae Seob, KIM Do Young, YIM Ji Hyeon, SHIN Dong Myeong
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CABLES CALCULATING CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPUTING CONDUCTORS CORRECTING FLUIDS COUNTING DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DYES ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES FREQUENCY-CHANGING INKS INSULATORS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHYSICS POLISHES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	A transparent conductor, a method of manufacturing the same, and a display including the same, the transparent conductor including metal nanowires; and a matrix in which the metal nanowires are embedded, wherein a capping layer is formed on surfaces of the metal nanowires, the capping layer including a sulfur-containing compound, and the capping layer has a thickness of about 0.025 or less times an average diameter of the metal nanowires.