METHOD OF PLASMA ETCHING

METHOD OF PLASMA ETCHING

A method of plasma etching includes an etching process that generates plasma from a process gas that includes fluorocarbon by using first high frequency power output by a first high frequency power source, and by the generated plasma, etches a low-k film with a metal-containing film as a mask. In th...

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Bibliographische Detailangaben
1. Verfasser: WADA Toshiharu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of plasma etching includes an etching process that generates plasma from a process gas that includes fluorocarbon by using first high frequency power output by a first high frequency power source, and by the generated plasma, etches a low-k film with a metal-containing film as a mask. In the etching process, the first high frequency power is intermittently applied.