A THREE-DIMENSIONAL MEMORY DEVICE

According to one embodiment, the plurality of contact vias extend in the stacking direction in the insulating layer, and are in contact with the end parts of the electrode layers. The plurality of second columnar parts extend in the stacking direction in the second stacked part, and include a plural...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOSHIMIZU Yasuhito, GAWASE Akifumi, AKEBOSHI Yuya
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:According to one embodiment, the plurality of contact vias extend in the stacking direction in the insulating layer, and are in contact with the end parts of the electrode layers. The plurality of second columnar parts extend in the stacking direction in the second stacked part, and include a plurality of second semiconductor bodies being different in length in the stacking direction.