STRUCTURE AND METHOD FOR MULTI-THRESHOLD VOLTAGE ADJUSTED SILICON GERMANIUM ALLOY DEVICES WITH SAME SILICON GERMANIUM CONTENT

STRUCTURE AND METHOD FOR MULTI-THRESHOLD VOLTAGE ADJUSTED SILICON GERMANIUM ALLOY DEVICES WITH SAME SILICON GERMANIUM CONTENT

A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Reznicek Alexander, Kerber Pranita, Ouyang Christine Q, Hashemi Pouya
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.