THERMOELECTRIC MATERIAL WITH AN ANTIFLUORITE STRUCTURE TYPE MATRIX AND METHOD OF MANUFACTURING THE MATERIAL

A method of manufacturing a thermoelectric material including: providing a half-Heusler compound of MgCuSn nanoparticles, obtaining a powder by mechanical alloying by using Mg chips, Si fine powder, Sn fine powder and Sb powder, the half-Heusler compound of MgCuSn nanoparticles and cyclohexane solut...

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Hauptverfasser:	BERNARD-GRANGER Guillaume, AYAPE KATCHO Nebil, VRACAR Radivoje, MINGO BISQUERT Natalio
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CASTING CHEMISTRY ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	A method of manufacturing a thermoelectric material including: providing a half-Heusler compound of MgCuSn nanoparticles, obtaining a powder by mechanical alloying by using Mg chips, Si fine powder, Sn fine powder and Sb powder, the half-Heusler compound of MgCuSn nanoparticles and cyclohexane solution,wherein the weight percent V, of the cyclohexane solution is comprised between 0.5 wt % and 4.0 wt % and wherein the volume percent VHH of the Half-Heusler compound of MgCuSn nanoparticles satisfies: 1.4 vol %