SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER

A silicon nitride powder having a specific surface area of 4.0 to 9.0 m2/g, a β phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scatter...

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Bibliographische Detailangaben
Hauptverfasser:	Honda Michio, Yamao Takeshi, Jida Shinsuke
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY NON-METALLIC ELEMENTS PRINTED CIRCUITS REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A silicon nitride powder having a specific surface area of 4.0 to 9.0 m2/g, a β phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 μm and 1.5 to 3.0 μm, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 μm)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 μm)) is 0.5 to 1.5, and a ratio D50/DBET (μm/μm) of a median diameter D50 (μm) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter DBET (μm) calculated from the specific surface area is 3.5 or more.