Design Based Sampling and Binning for Yield Critical Defects

Design Based Sampling and Binning for Yield Critical Defects

Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Babulnath Raghav, Gao Lisheng, Kurada Satya, Ng Kwok
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
HANDLING RECORD CARRIERS
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
TESTING
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Beschreibung
Zusammenfassung:Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.