WAFER MANUFACTURING SYSTEM AND RELATED PROCESS

The process for manufacturing a semiconductor wafer includes steps for mounting a semiconductor work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the semiconductor work piece, exfoliating the outer surface...

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Bibliographische Detailangaben
Hauptverfasser:	Goorsky Mark Stanley, Rosenzweig James Benjamin, Yakub Andrew X
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS CRYSTAL GROWTH ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	The process for manufacturing a semiconductor wafer includes steps for mounting a semiconductor work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the semiconductor work piece, exfoliating the outer surface layer of the semiconductor work piece with the energized beam, and removing the exfoliated outer surface layer from the semiconductor work piece as the semiconductor wafer having a thickness less than 100 micrometers.