High-throughput multichamber atomic layer deposition systems and methods

ALD systems and methods having high throughput are disclosed. The ALD systems and methods employ a process chamber that has multiple chamber sections defined by interior chamber dividers. The wafers to be processed are supported on a platen that rotates beneath a process chamber housing with a small gap therebetween so that the wafers are moved between the chamber sections. The multiple chamber sections are pneumatically partitioned by the dividers and by pneumatic valves operably disposed therein and in pneumatic communication with the platen surface through the gap. Some chamber sections are used to perform an ALD process using process gasses, while other chamber sections are transition sections that include a purge gas. Some chamber sections can be employed to perform a laser process or a plasma process on the wafers passing therethrough.