SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor memory device includes first and second interconnect parts, and a second interconnect connection part. The first interconnect part includes a first core part, and a first interconnect layer. The first interconnect layer includes a first surrounding region and a first extended region. The second interconnect part includes a second core part, and a second interconnect layer. The second interconnect layer includes a second surrounding region and a second extended region. The second extended connection part overlaps a part of the first extended region in the third direction, overlaps the second core part in the first direction, and is electrically connected to the second core part. The second extended surrounding part is provided around the second extended connection part and contains a material contained in the first surrounding region.