ALIGNER STRUCTURE AND ALIGNMENT METHOD
An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substra...
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| creator | CHO Saeng Hyun |
| description | An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substrate (S) and the mask (M) by the second relative displacement between the substrate (S) and the mask (M) after the first alignment by the first alignment unit (100). The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale. |
| format | Patent |
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The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170309&DB=EPODOC&CC=US&NR=2017069844A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170309&DB=EPODOC&CC=US&NR=2017069844A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHO Saeng Hyun</creatorcontrib><title>ALIGNER STRUCTURE AND ALIGNMENT METHOD</title><description>An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substrate (S) and the mask (M) by the second relative displacement between the substrate (S) and the mask (M) after the first alignment by the first alignment unit (100). The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBz9PF093MNUggOCQp1DgkNclVw9HNRAIv6uvqFKPi6hnj4u_AwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQ3MDM0sLExNHQ2PiVAEAWN8kmQ</recordid><startdate>20170309</startdate><enddate>20170309</enddate><creator>CHO Saeng Hyun</creator><scope>EVB</scope></search><sort><creationdate>20170309</creationdate><title>ALIGNER STRUCTURE AND ALIGNMENT METHOD</title><author>CHO Saeng Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017069844A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHO Saeng Hyun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHO Saeng Hyun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALIGNER STRUCTURE AND ALIGNMENT METHOD</title><date>2017-03-09</date><risdate>2017</risdate><abstract>An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substrate (S) and the mask (M) by the second relative displacement between the substrate (S) and the mask (M) after the first alignment by the first alignment unit (100). The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ALIGNER STRUCTURE AND ALIGNMENT METHOD |
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