III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY PATTERNED IMPLANTED SPECIES

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY PATTERNED IMPLANTED SPECIES

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-...

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Bibliographische Detailangaben
1. Verfasser: Linthicum Kevin J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.