SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first s...
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creator | JIMBO Sadayuki OKUMURA Hideki YAMAGUCHI Takuya TSUCHITANI Masanobu |
description | A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017069714A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017069714A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017069714A13</originalsourceid><addsrcrecordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobmBmaW5oYmjobGxKkCACLWKZE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>JIMBO Sadayuki ; OKUMURA Hideki ; YAMAGUCHI Takuya ; TSUCHITANI Masanobu</creator><creatorcontrib>JIMBO Sadayuki ; OKUMURA Hideki ; YAMAGUCHI Takuya ; TSUCHITANI Masanobu</creatorcontrib><description>A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170309&DB=EPODOC&CC=US&NR=2017069714A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170309&DB=EPODOC&CC=US&NR=2017069714A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIMBO Sadayuki</creatorcontrib><creatorcontrib>OKUMURA Hideki</creatorcontrib><creatorcontrib>YAMAGUCHI Takuya</creatorcontrib><creatorcontrib>TSUCHITANI Masanobu</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><description>A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobmBmaW5oYmjobGxKkCACLWKZE</recordid><startdate>20170309</startdate><enddate>20170309</enddate><creator>JIMBO Sadayuki</creator><creator>OKUMURA Hideki</creator><creator>YAMAGUCHI Takuya</creator><creator>TSUCHITANI Masanobu</creator><scope>EVB</scope></search><sort><creationdate>20170309</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><author>JIMBO Sadayuki ; OKUMURA Hideki ; YAMAGUCHI Takuya ; TSUCHITANI Masanobu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017069714A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JIMBO Sadayuki</creatorcontrib><creatorcontrib>OKUMURA Hideki</creatorcontrib><creatorcontrib>YAMAGUCHI Takuya</creatorcontrib><creatorcontrib>TSUCHITANI Masanobu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIMBO Sadayuki</au><au>OKUMURA Hideki</au><au>YAMAGUCHI Takuya</au><au>TSUCHITANI Masanobu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><date>2017-03-09</date><risdate>2017</risdate><abstract>A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
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