SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first s...

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Bibliographische Detailangaben
Hauptverfasser: JIMBO Sadayuki, OKUMURA Hideki, YAMAGUCHI Takuya, TSUCHITANI Masanobu
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the second conductivity type, and an insulating portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion is located in a vicinity of, and contacts, the second semiconductor region and the third semiconductor region, and the insulating portion includes a plurality of voids therein, the plurality of voids extending around the second semiconductor region.