APPARATUS AND METHOD FOR PLACING STRESSORS WITHIN AN INTEGRATED CIRCUIT DEVICE TO MANAGE ELECTROMIGRATION FAILURES

An integrated circuit device includes a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect, a second line in a second metal layer of the integrated circuit device, and a first via that couples the first line to the s...

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Hauptverfasser: Reber Douglas M, Travis Edward O, Shroff Mehul D
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creator Reber Douglas M
Travis Edward O
Shroff Mehul D
description An integrated circuit device includes a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect, a second line in a second metal layer of the integrated circuit device, and a first via that couples the first line to the second line. The integrated circuit device further includes a first stressor disposed at a first area of the interconnect, wherein the first area at least partially overlaps the first via, wherein the first stressor alters an electromigration stress profile for the interconnect by altering a stress at the first area to be less tensile.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title APPARATUS AND METHOD FOR PLACING STRESSORS WITHIN AN INTEGRATED CIRCUIT DEVICE TO MANAGE ELECTROMIGRATION FAILURES
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