APPARATUS AND METHOD FOR PLACING STRESSORS WITHIN AN INTEGRATED CIRCUIT DEVICE TO MANAGE ELECTROMIGRATION FAILURES

An integrated circuit device includes a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect, a second line in a second metal layer of the integrated circuit device, and a first via that couples the first line to the s...

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Bibliographische Detailangaben
Hauptverfasser: Reber Douglas M, Travis Edward O, Shroff Mehul D
Format: Patent
Sprache:eng
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Zusammenfassung:An integrated circuit device includes a first line in a first metal layer of the integrated circuit device, wherein the first line forms at least a portion of an interconnect, a second line in a second metal layer of the integrated circuit device, and a first via that couples the first line to the second line. The integrated circuit device further includes a first stressor disposed at a first area of the interconnect, wherein the first area at least partially overlaps the first via, wherein the first stressor alters an electromigration stress profile for the interconnect by altering a stress at the first area to be less tensile.