MONITORING CHANGES IN PHOTOMASK DEFECTIVITY

MONITORING CHANGES IN PHOTOMASK DEFECTIVITY

A reticle that is within specifications is inspected to generate baseline candidate defects and their location and size. After using the reticle in photolithography, the reticle is inspected to generate current candidate defects and their location and size. An inspection report of filtered candidate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Blecher Joseph M, Guan Chun, Xiong Yalin, Wihl Mark J, Comstock Robert A
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A reticle that is within specifications is inspected to generate baseline candidate defects and their location and size. After using the reticle in photolithography, the reticle is inspected to generate current candidate defects and their location and size. An inspection report of filtered candidate defects and their images is generated so that these candidate defects include a first subset of the current candidate defects and their images and exclude a second subset of the current candidate defects and their images. Each of the first subset of candidate defects has a location and size that fails to match any baseline candidate defect's location and size, and each of the excluded second subset of candidate defects has a location and size that matches a baseline candidate defect's location and size.