SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided in the trench; an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided in the trench; an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor substrate; a Schottky electrode provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and being in Schottky contact with the semiconductor substrate; an embedded electrode provided in a concave portion between the interlayer insulating film and the Schottky electrode and made of a metal different from a metal of the Schottky electrode; and a surface electrode covering the interlayer insulating film, the embedded electrode, and the Schottky electrode. |
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