CUPRIC OXIDE SEMICONDUCTORS

A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Panzer Matthew, Zhu Changqiong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on the cupric oxide layer, which serves as a seed layer, to yield a cupric oxide film, thereby obtaining a cupric oxide semiconductor. Also disclosed are a cupric oxide semiconductor thus prepared and a photovoltaic device including it.