PATTERN FORMING METHOD AND BAKE CONDITION DETERMINING METHOD

In a pattern forming method according to an embodiment, a work film to be processed is formed on a substrate, and a resist pattern is formed on the top of the work film. Then, the resist pattern is baked in the bake condition set at positions of the substrate. This forms first inclined surfaces those are not parallel to the top and side surfaces of the work film on the resist pattern. The first inclined surfaces are formed into shapes in accordance with the bake condition at positions of the substrate. Furthermore, the work film is etched using the resist pattern as a mask so as to form a second inclined surface on the work film.