CRUCIBLE, FABRICATION METHOD OF THE CRUCIBLE, AND FABRICATION METHOD OF A CRYSTALLINE MATERIAL BY MEANS OF SUCH A CRUCIBLE

A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of...

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Bibliographische Detailangaben
Hauptverfasser:	PIHAN Etienne, GARANDET Jean-Paul, CHAVRIER Denis
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPRAYING OR ATOMISING IN GENERAL TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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Beschreibung
Zusammenfassung:	A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.