SEMICONDUCTOR DEVICES HAVING METAL BUMPS WITH FLANGE
A semiconductor device having a terminal site (100) including a flat pad (110) of a first metal covered by a layer (130) of dielectric material, the layer over the pad parallel to the pad and having a window of a first diameter (132) exposing the surface of the underlying pad. The terminal site furt...
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Zusammenfassung: | A semiconductor device having a terminal site (100) including a flat pad (110) of a first metal covered by a layer (130) of dielectric material, the layer over the pad parallel to the pad and having a window of a first diameter (132) exposing the surface of the underlying pad. The terminal site further has a patch-shaped film (140) of a second metal covering the surface of the exposed first metal and the surface of an annulus of the dielectric layer framing the window, the film patch having a second diameter (141) greater than the first diameter; and a bump (150) of a third metal adhering to the film, the bump having a third diameter (151) smaller than the second diameter, whereby the film protrudes like a flange from the bump. |
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