CONDUCTIVE PLUG AND METHOD OF FORMING THE SAME

A method of forming a conductive plug is disclosed. A material layer having at least one opening is provided on a substrate. A first conductive layer is deposited in the opening, wherein the first conductive layer does not completely fill up the opening. A second conductive layer is deposited on the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Su Chin-Ta, Hung Yung-Tai, Ko Meng-Tsung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of forming a conductive plug is disclosed. A material layer having at least one opening is provided on a substrate. A first conductive layer is deposited in the opening, wherein the first conductive layer does not completely fill up the opening. A second conductive layer is deposited on the first conductive layer. A surface treatment is performed after the step of depositing the first conductive layer and before the step of depositing the second conductive layer, so that the first deposition rate of the second conductive layer at the lower portion of the opening is greater the second deposition rate of the second conductive layer at the upper portion of the opening. A void-free conductive plug can be easily formed with the method of the invention.