SEMICONDUCTOR DEVICE

Provided is a semiconductor device that includes a passivation film thinner than a wiring layer and has a high resistance to a stress caused during bonding. In the semiconductor device, a wiring layer (303) is formed in the vicinity of a bonding pad (301) via a gap (601), a passivation film (401) ha...

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Bibliographische Detailangaben
1. Verfasser:	SHIMAZAKI Koichi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Provided is a semiconductor device that includes a passivation film thinner than a wiring layer and has a high resistance to a stress caused during bonding. In the semiconductor device, a wiring layer (303) is formed in the vicinity of a bonding pad (301) via a gap (601), a passivation film (401) has a thickness smaller than that of the wiring layer (303) forming the bonding pad (301), and the gap (601) has a width equal to or smaller than twice the passivation film thickness.